Enhanced probe nano-oxidation by charge pump effect in swept tip voltage cycles
作者： Xian Ning Xie , Hong Jing Chung , Chorng Haur Sow , Andrew Thye Shen Wee
DOI: 10.1063/1.2817579
关键词:
摘要: A probe-based nano-oxidation method for enhanced vertical oxide growth on silicon is presented. The technique involves cycling the tip biases between positive and negative polarities to produce high-aspect-ratio nano-oxides. Enhanced oxidation was observed take place in bias region as opposed voltage required anodic oxidation. model based interface space charge accumulation neutralization, OH− reactant mobilization, diffusion proposed account enhancement under voltages. analogous transient pump effect which at work when polarity of a capacitor switched. results reveal dynamical behavior nonstatic fields can be harnessed fabricating nanostructures with improved aspect ratios.
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