Local oxidation of Ga[Al]As heterostructures with modulated tip-sample voltages
作者： K. Ensslin , T. Ihn , D. C. Driscoll , D. Graf , M. Frommenwiler
DOI: 10.1063/1.2176162
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摘要: Nanolithography based on local oxidation with a scanning force microscope has been performed an undoped GaAs wafer and Ga[Al]As heterostructure cap layer shallow two-dimensional electron gas. The oxide growth the resulting electronic properties of patterned structures are compared for constant modulated voltages applied to conductive tip microscope. All lithography in noncontact mode. Modulating voltage enhances aspect ratio lines, which significantly strengthens insulating lines GaAs. In addition, process is found be more reliable reproducible. Using this technique, quantum point contact wire have defined stability, confinement potential electrical tunability demonstrated similar voltage.
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