Kelvin force microscopy characterization of charging effect in thin a-SiOxNy:H layers deposited in pulsed plasma enhanced chemical vapor deposition process by tuning the Silicon-environment
作者： C. Villeneuve-Faure , K. Makasheva , C. Bonafos , B. Despax , L. Boudou
DOI: 10.1063/1.4805026
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摘要: Results from a study on the charging effect of a-SiOxNy:H thin layers are presented in this paper. Issues related to structural and electrical characterization these discussed. Spectroscopic ellipsometry was used determine accurately layer thickness their optical properties, while Kelvin Force Microscopy (KFM) applied characterize local properties layers. Obtained results reveal that by tuning Si-environment dielectric layers, deposited plasma assisted process, strong modification surface volume charge conduction can be achieved. Particularly, increasing Si-content rises charges retention. Thus, engineered order meet specific requirements.
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