Charge injection in thin dielectric layers by atomic force microscopy: influence of geometry and material work function of the AFM tip on the injection process.

摘要: Charge injection and retention in thin dielectric layers remain critical issues for the reliability of many electronic devices because their association with a large number failure mechanisms. To overcome this drawback, deep understanding mechanisms leading to charge close area is needed. Even though extensively studied reported literature characterize storage capability materials, questions about when using atomic force microscopy (AFM) open. In paper, thorough study by AFM plasma-processed amorphous silicon oxynitride properties that thermal silica presented. The considers impact applied voltage polarity, work function tip coating curvature radius. A simple theoretical model was developed used analyze obtained experimental results. electric field distribution computed as geometry. results highlight after layer lateral spreading mainly controlled radial component independently carrier polarity. injected density influenced nature electrode metal (work function) its geometry (tip radius). electron ruled Schottky barrier through emission mechanism enhanced thermionic emission. hole seems differ from one depending on coating. Based performed analysis, it suggested AFM, pinning Fermi level metal-induced gap states starts playing role