作者: T. Melin , M. Saint-Jean , C. Guthmann , J. S. Lambert , G. De Loubens
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摘要: We report the observation in direct space of transport a few thousand charges submitted to tunable electric field along surface silicon oxide layer. Charges are both deposited and observed using same Electrostatic Force Microscope. During time range accessible our measurements (i.e. $t=1\sim1000\un{s}$), electrons is mediated by traps oxide. measure mobility "surface" states layer show dispersive nature their motion. It also demonstrated that saturation deep strongly enhance under lateral field.