Thermal characterization of a double-gate silicon-on-insulator MOSFET
作者： Manoj K Pandey , Sujata Sen , R S Gupta
DOI: 10.1088/0022-3727/32/3/023
关键词:
摘要: A two-dimensional analytical model to study the behaviour of device parameters in various temperature ranges is developed. The dependences threshold voltage, drain current and channel transconductance are modelled using temperature-sensitive parameters. effects on cut-off frequency channel-transit time also discussed. results so obtained compared with experimental data for a single-gate silicon-on-insulator MOSFET.
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