Low-Temperature Drain Current Characteristics in Sub-10-nm-Thick SOI nMOSFET's on SIMOX (Separation by IMplanted OXygen) Substrates

摘要: This paper describes specific features in low-temperature drain current and transconductance characteristics of thin silicon-on-insulator n-channel metal-oxide-semiconductor field effect transistors (SOI nMOSFET's) with a sub-10-nm-thick silicon layer presents some simple analyses based on quantum mechanics. It is suggested that these originate from the two-dimensional subband system SOI its local deviation local-deviated thickness reflecting buried oxide surface morphology high-temperature-annealed SIMOX substrates.