Single-electron and quantum SOI devices
作者： Yukinori Ono , Kenji Yamazaki , Masao Nagase , Seiji Horiguchi , Kenji Shiraishi
DOI: 10.1016/S0167-9317(01)00638-4
关键词:
摘要: This paper describes, from the viewpoint of device fabrication, single-electron and quantum devices using silicon-on-insulators (SOIs). We point out that control oxidation Si is quite important could be key to their fabrication. also introduce our technique for making transistors (SETs), which uses special phenomena occur during SOIs, show enables us realize primary circuits as a result its high controllability reproducibility.
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sci-hub.se 参考文章(41)
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