Creation of [110]-aligned Si quantum wires encompassed by SiO2 using low-energy separation-by-implanted-oxygen on a V-groove patterned substrate
作者： Yukari Ishikawa , N. Shibata , S. Fukatsu
DOI: 10.1063/1.121427
关键词:
摘要: Si quantum wires (QWRs) suspended in SiO2 are successfully created on a V-groove patterned Si(001) substrate by using low-energy oxygen ion implantation. A single QWR aligned to [110] is formed near the bottom center of V groove, which has hexagonal cross section with {111} and {001} lateral facets. The development QWRs was found be controlled dose formation mechanism attributed an enrichment corner arises from straggling.
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