Fabrication of highly oriented Si:SiO2 nanoparticles using low energy oxygen ion implantation during Si molecular beam epitaxy

摘要: A novel technique is developed for fabricating highly oriented Si nanoparticles (SNP) embedded in SiO2 using multiple low energy oxygen ion implantation during molecular beam epitaxy. The SNPs are of nearly isotropic but faceted morphologies with almost perfect crystallinity as revealed by transmission electron microscopy. preferred axis SNP cores found to be aligned [100] due epitaxy on a Si(100) substrate, reflecting the character SNPs. Visible luminescence from dimensions approaching quantum confinement regime observed at room temperature.