Mechanical modeling of ion beam lithography masks
作者： A. Fisher , R. Tejeda , M. Sprague , R. Engelstad , E. Lovell
DOI: 10.1016/S0167-9317(98)00056-2
关键词:
摘要: The success of ion beam lithography in the sub-0.13 μm technology region is partially dependent on development a low distortion mask. To that end, finite element analyses have been performed to predict distortions due mounting stencil mask during exposure beam. In addition, modeling techniques which allow for determination in-plane specific pattern features fabrication developed. Results can be used perform Pattern Specific Emulation (PSE).
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