Epitaxial process for silicon on insulator structure

摘要: The present invention provides products and methods of forming an epitaxial silicon layer on implanted buried insulator structure (10). A film (16) is pre-treated to remove residual oxide surface damage layers, but in such a way as not the or insulating (14) below (16). amorphous (18) formed processes avoid formation polycrystalline silicon, also annealed form single crystalline (20).