Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon Films

摘要: The structure of silicon films deposited by low pressure, chemical vapor deposition in the 600°C temperature range has been investigated x‐ray diffraction and transmission electron microscopy. There is a critical near 600°C, above which are polycrystalline below amorphous obtained. This close to that used deposit for integrated circuit applications. When polycrystalline, texture dominates. reasonably stable upon annealing temperatures up approximately 1100°C. initially films, however, easily crystallize. Crystallization observed be well advanced after at 800°C. Large stresses built into while lower.