The barrier height enhancement of the Au/n-Si/Al Schottky barrier diode by electrochemically formed an organic Anthracene layer on n-Si
作者： Z. Çaldıran , A.R. Deniz , Ş. Aydoğan , A. Yesildag , D. Ekinci
DOI: 10.1016/J.SPMI.2012.12.004
关键词:
摘要: Abstract In this work, an Au/Anthracene/n-Si/Al Schottky barrier diode was fabricated and it found that the showed good rectification properties. The characteristic parameters of device such as height, ideality factor, interface states density series resistance were determined from current–voltage measurements. It seen Anthracene organic layer increased effective height Au/n-Si/Al since creates physical between Au n-Si. Furthermore, characteristics under forward bias to be ohmic due conduction at lower voltage regions. At higher regions there is space charge limited (SCLC) mechanism. capacitance–voltage curves analyzed in various frequencies a function bias.
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