作者: Alexander Dribinsky , Tae Youn Kim , Christopher N. Brindle , Dylan J. Kelly
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摘要: A circuit and method for controlling charge injection in a are disclosed. In one embodiment, the employed semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. an SOI RF switch comprises plurality of switching transistors coupled series, referred to as “stacked” transistors, implemented monolithic integrated on substrate. Charge control elements receive injected from resistively-isolated nodes located between convey at least node that is not resistively-isolated. comprise resistors. another transistors. disclosed whereby generated series conveyed