Alternative body contact for fully-depleted silicon-on-insulator transistors

摘要: Two preferred embodiments for an alternative body contact are disclosed fully-depleted silicon-on-insulator transistors. In one embodiment, is made by extending the mesa ends of ties down to, and merging them with, regions nFET source using self-aligned silicide (commonly known as salicide) to make a connection underlying well. this first mesas merge with salicide used short out these regions. another source; however, not merged. second metal routing, which commonly electrically connect circuit elements, extended ties. both embodiments, active until onset full depletion; at depletion, severed.