Aluminum-induced crystallization : Nucleation and growth process
作者： J. Schneider , A. Schneider , A. Sarikov , J. Klein , M. Muske
DOI: 10.1016/J.JNONCRYSOL.2005.09.036
关键词:
摘要: The formation of polycrystalline silicon (poly-Si) films by Al-induced crystallization (ALILE process) was studied in situ optical microscopy. characteristic feature this process is that nucleation strongly suppressed after an initial period. use cooling periods the course annealing leads to enhanced and reveals Si depleted regions around growing grains prevents further nucleation. growth mechanism discussed starting from phase diagram Al/Si system. It turns out critical parameter actual concentration Al value supersaturation.
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