Edge-emitting nitride-based laser diode with P-N tunnel junction current injection
作者： Christian G. Van de Walle , Michael A. Kneissl , Peter Kiesel
DOI:
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摘要: A p-n tunnel junction between a p-type semiconductor layer and n-type provides current injection for an edge-emitting nitride based laser structure. The amount of material in the structure can be minimized, with attendant advantages electrical, thermal, optical performance, fabrication.
google.co.za 参考文章(11)
Jerry M. Olson, Sarah R. Kurtz, Tunnel junction multiple wavelength light-emitting diodes ,(1991)
Masayuki Senoh, Shinichi Nagahama, Shuji Nakamura, Nitride semiconductor light-emitting and light-receiving devices ,(1998)
Thomas L. Paoli, Linda T. Romano, Christian G. Van de Walle, Michael A. Kneissl, David P. Bour, Structure and method for self-aligned, index-guided, buried heterostructure algalnn laser diodes ,(1999)
Charles H. Church, John M. Zavada, Robert G. Wilson, James S. Speck, Steven P. DenBaars, Miniature self-pumped monolithically integrated solid state laser ,(1996)
Yoon-Kyu Song, Arto V Nurmikko, Blue/ultraviolet/green vertical cavity surface emitting laser employing lateral edge overgrowth (LEO) technique ,(1999)
Achyut Kumar Dutta, Surface-emission type light-emitting diode and fabrication process therefor ,(1996)
Reiko Soejima, Kazuhiko Horino, Shinichi Kubota, Akito Kuramata, Optical semiconductor device having an epitaxial layer of iii-v compound semiconductor material containing n as a group v element ,(1999)
Nick Holonyak, Peter W. Evans, Jonathan J. Wierer, Semiconductor devices and methods with tunnel contact hole sources ,(1997)
Thomas L. Paoli, Michael A. Kneissl, Two section blue laser diode with reduced output power droop ,(2001)
David P. Bour, Michael A. Kneissl, Linda T. Romano, Algainn elog led and laser diode structures for pure blue or green emission ,(1999)