Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
作者： Michael A. Kneissl
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摘要: A novel indium gallium nitride laser diode is described. The uses in either the waveguide layers and/or cladding layers. It has been found that InGaN or enhance optical confinement with very small losses. Furthermore, use of can improve structural integrity active region epilayers because reduced lattice mismatch between and region.
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