Analog switch device having threshold change reducing means

摘要: An analog switch device has p- and n-channel metal oxide semiconductor field effect transistors, each having a source electrode, drain gate electrode substrate electrode. The transistors are connected parallel to other. First second signals received produced at pair of nodes between the transistors. Control which inverted with other respectively supplied electrodes A voltage buffer circuit is provided for applying predetermined one so as decrease change in threshold due source-substrate bias effect.