Heat capacities, entropies, and Gibbs free energies of formation of low-k amorphous Si(O)CH dielectric films and implications for stability during processing

摘要: Abstract Low-temperature heat capacities of a series low dielectric constant amorphous films with different compositions were measured from 1.8 to 300 K using Quantum Design Physical Property Measurement System (PPMS). By piece wise functions fit the capacities, characteristic Debye temperatures Θ D and standard molar entropies are determined. The these materials range 8.8 J·K -1 ·mol 17.5 . Together formation enthalpies obtained by high temperature oxidative solution calorimetry in molten sodium molybdate solvent, corresponding Gibbs free energies elements crystalline constituents (and gaseous products as required) obtained. energy terms dominated enthalpy term rather than entropy. These samples thermodynamically stable at room respect oxygen incorporated generally more others. However, compared binary counterparts gases, some possess either positive or close-to-zero formation, indicating that they metastable; while, for rest, which ambient conditions, elevation will eventually lead decomposition.