On growth of epitaxial vanadium oxide thin film on sapphire (0001)

摘要: We report the characteristics of epitaxial growth and properties vanadium oxide (VO2) thin films on sapphire (0001) substrates. Pulsed laser deposition was used to grow (002) oriented VO2 (0001). Transmission electron microscopy studies showed that orientation relationship between substrate film is: (002)f2||(0006)sub3 [010]f2 [2110]sub. It also established has three different orientations in plane which are rotated by 60° from each other. The been explained framework domain matching epitaxy (DME). Electrical resistivity measurements as a function temperature sharp transition with hysteresis width ˜5 °C, large resistance change (˜1.5 × 104) semiconductor phase metal phase. is interesting note spite angle twin boundaries these films, SMT better than those observed for polycrystalline films. higher thermal c-sapphire compared bulk single crystal single-crystal r-sapphire can be attributed existence large-angle grain boundaries. These findings provide insight into transformation VO2, important applications switching memory devices.