Method for forming a storage capacitor within an integrated circuit
作者： Chao-Ming Koh
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摘要: A method for forming a storage capacitor within an integrated circuit cell. There is first formed upon semiconductor substrate The cell has therein Field Effect Transistor (FET) which exposed source/drain electrode. also at least one other device contact then the blanket conductor layer. layer patterned to form portion of and second separate from each other. forms contacting electrode device. simultaneously node (FET). may be completed by dielectric subsequently plate
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