Fabrication process for metal-insulator-metal capacitor with low gate resistance
作者： Sheng-Hsiung Chen
DOI:
关键词: Semiconductor 、 Dielectric 、 Materials science 、 Electrical engineering 、 Layer (electronics) 、 Tin 、 Fabrication 、 Capacitor 、 Optoelectronics 、 Stack (abstract data type) 、 Electrical contacts
摘要: A new method is provided for the creation of openings in a layer dielectric while at same time forming that forms MIM capacitors. Under first embodiment invention insulation, such as Si x N y or SiON TaN and TiN, deposited over surface semiconductor substrate, points electrical contact have been this surface. IMD an opening created aligns with overlays point which capacitor to be created. second invention, stack three layers followed by SiO used whereby etch stop etched upper plate capacitor.
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