Method of fabricating a semiconductor device having dual stacked MIM capacitor
作者： Seok-jun Won
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摘要: Semiconductor devices having a dual stacked MIM capacitor and methods of fabricating the same are disclosed. The semiconductor device includes formed on substrate. lower plate positioned, an upper electrically connected to positioned above plate, intermediate interposed between plate. An interconnection line is at level as As result, may be by damascene process.
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