作者: Groves Robert Allen , Ando Takashi , Clevenger Lawrence A , Bonilla Griselda , Jagannathan Hemanth
DOI:
关键词:
摘要: A method is presented for forming a stacked metal-insular-metal (MIM) capacitor with self-aligned contact. The includes first electrode plate over interlayer dielectric (ILD), spacer adjacent the plate, insulating layer second layer, and layer. further third ILD plate. also via through directly contacting such to prevent from