Integrating metal-insulator-metal capacitors with air gap process flow
作者： Veeraraghavan S. Basker , Theodorus E. Standaert , Junli Wang , Kangguo Cheng
DOI:
关键词: Air gap (plumbing) 、 Electrode 、 Conformal map 、 Materials science 、 Interconnection 、 Metal 、 Semiconductor device 、 Optoelectronics 、 Capacitor 、 Metal insulator metal capacitor
摘要: Semiconductor devices are provided which have MIM (metal-insulator-metal) capacitor structures that integrated within air gaps of on-chip interconnect structures, as well methods for integrating formation part an gap process flow fabricating structures. For example, a semiconductor device includes dielectric layer with first pattern metal lines and second lines. Air disposed in spaces between the Portions include conformal insulating material on sidewalls metallic fills The comprises electrode, fill structure.
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