High density metal capacitor using via etch stopping layer as field dielectric in dual-damascence interconnect process

作者: Liming Tsau

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摘要: A metal-insulator-metal (MIM) capacitor is made according to a copper dual-damascene process. first or alloy metal layer if formed on substrate. portion of the utilized as lower plate MIM capacitor. An etch stop dielectric used during etching subsequent layers. an not removed and insulator for second later upper

参考文章(24)
Jeffrey P. Gambino, Chandrasekhar Narayan, Toshiaki Kirihata, Conductor-insulator-conductor structure ,(1998)
Zachary J. Lemnios, David G. McIntyre, Dennis A. Williams, Chung-Lim Lau, Three metal personalization of application specific monolithic microwave integrated circuit ,(1990)
Yuan-Hung Chiu, Chu-Yan Fu, Syun-Ming Jang, Method to reduce silicon oxynitride etch rate in a silicon oxide dry etch ,(1999)
Chiu Ting, Valery Dubin, Robin W. Cheung, Pulse electroplating copper or copper alloys ,(1997)
Seungmoo Choi, Pradip Kimar Roy, Glenn B. Alers, Sailesh Mansinh Merchant, Integrated circuit device having dual damascene capacitor ,(1999)
Michael John Sebastian Smith, Application-Specific Integrated Circuits ,(1997)
Chi-Wu Chou, Chun-Hon Chen, Ssu-Pin Ma, Kuo-Reay Peng, Heng-Ming Hsu, Ta-Hsun Yeh, Yen-Shih Ho, Kong-Beng Thei, Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow ,(2000)