作者: Hidenori Morimoto
DOI:
关键词:
摘要: A semiconductor capacitor device has paired first and second MIM capacitors (C1, C2) on a substrate (1). The and second include respective dielectric films (6, 8) having different compositions. Furthermore, upper electrodes (7, 9) lower (5, 7) of the MIM capacitors are connected in inverse parallel fashion. This arrangement facilitates mutual counteraction voltage dependences so as to make voltage dependence capacitance the capacitor small.