On the hydrogenation of Poly-Si passivating contacts by Al2O3 and SiNx thin films
作者： Bas W.H. van de Loo , Bart Macco , Manuel Schnabel , Maciej K. Stodolny , Agnes A. Mewe
DOI: 10.1016/J.SOLMAT.2020.110592
关键词:
摘要: … On the hydrogenation of Poly-Si passivating contacts by Al 2 O 3 and SiN x thin films … Al 2 O 3 thin films were annealed in nitrogen ambient at 425 C for 20 min prior to subsequent SiN X …
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