Dual-sided capacitor and method of formation
作者： Shenlin Chen , Er-Xuan Ping
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摘要: A dual-sided HSG capacitor and a method of fabrication are disclosed. thin native oxide layer is formed between doped polycrystalline hemispherical grained polysilicon (HSG) as part lower electrode. Prior to the dielectric formation, electrode may be optionally annealed improve capacitance.
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