Strained GeSn p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors With In Situ Si 2 H 6 Surface Passivation: Impact of Sn Composition
作者： Yan Liu , Jing Yan , Hongjuan Wang , Qingfang Zhang , Mingshan Liu
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摘要: We report a study about the impact of Sn composition on performance strained germanium-tin (GeSn) pMOSFETs. GeSn pMOSFETs with compositions 0.027, 0.040, and 0.075 were fabricated Ge(001) an in situ Si 2 H 6 passivation. Enhancement drive current transconductance is obtained for higher due to smaller capacitance equivalent thickness, reduced source/drain resistance, improved effective hole mobility μeff. Right shift threshold voltage observed devices. Ge 0.973 Sn 0.027 , 0.960 Sn 0.040 , 0.925 Sn 0.075 demonstrate peak μ eff 340, 378, 496 cm 2 /Vs, respectively. At inversion charge density 5 × 10 12 -2 , 36% 24% enhancement compared 0.027 0.040 devices, Simulation shows that μeff resulted from reduction mass intervalley scattering between heavy light holes caused by increased compressive strain.
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