Practicable Method for Estimating Thermal Depths from Phonon-Broadened Photoexcitation Cross-Section Bands I. Foundations

作者: R. Pässler

DOI: 10.1002/PSSB.2221670119

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摘要: Photoexcitation cross-sections of deep traps in semiconductors that are thermally broadened by multiphonon (MP) emission and absorption represented convolutions electronic parts with averaged Franck-Condon factors. A trap-independent MP versus probability relation following from analytical expressions for the limiting case vanishing phonon dispersion is generalized to arbitrary energies assumed, however, remain unchanged during a transition. Corresponding factors shown decompose into products universal exponential factor, exp (−ΔE/2kT), system-specific representing symmetric functions vibrational energy difference ΔE. On this basis an upper bound derived ground-to-first-excited level distance vertex position correspondingly transformed photoexcitation cross-section band. The exemplification electron excitation oxygen donor (state 1) gallium arsenide shows reasonable agreement results obtained other methods. Photoanregungsquerschnitte von tiefen Haftstellen Halbleitern, die durch Multiphonon (MP)-Emission und -Absorption thermisch verbreitert sind, werden Konvolutionen der elektronischen Anteile mit gemittelten Frank-Condon-Faktoren dargestellt. Eine aus analytischen Ausdrukken fur den Fall verschwindender Phononendispersion folgende haftstellenunabhangige Beziehung zwischen MP-Apsorptions- -Emissionswahrscheinlichkeiten wird auf beliebige Dispersion Phononenenergien verallgemeinert, wobei allerdings angenommen wird, das sich diese wahrend des Ubergangs nicht andern. Es gezeigt, entsprechenden Franck-Condon-Faktoren gegeben sind Produkte eines universellen Exponentialfaktors, systemspezifischen Teilen, symmetrische Funktionen Differenz Schwingungsenergien ΔE darstellen. Auf dieser Grundlage eine obere Grenze Abstand Grundniveaus zum ersten angeregten Niveau Scheitelpunktslage entsprechend transformierten Photoanregungsquerschnittsbands abgeleitet. Anwendung Elektronenanregung Sauerstoffdonatorniveaus (Zustand Galliumarsenid zeigt befriedigende Ubereinstimmung Ergebnissen anderer Methoden.

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