Chapter 1 Deep Levels in Wide Band-Gap III-V Semiconductors

摘要: Publisher Summary This chapter focuses on the properties of deep states in wide band-gap III–V semiconductors. Deep are important semiconductors general and very often determine recombination properties. Wide III-V compounds now commonly used for many optoelectronic devices suggested additional interesting applications. In discussing levels semiconductors, first requirement is to define “deep” “wide.” The latter can be done relatively easily, although arbitrarily. “Deep” defined terms because profound influence such material behavior. Properties specifically affected include minority-carrier lifetime luminescence efficiency. If dominate recombination, these will degraded from value obtained dopants, which deliberately added impurities, provide either desired electrical and/or luminescent A convenient way quantifying importance via “occupancy” factor a level. Various methods available characterization compilation reported gallium arsenide (GaAs) phosphide (GaP) discussed chapter.