Thermal filling effects in capacitance experiments on deep levels in semiconductors

摘要: The interpretation of capacitance studies deep levels in semiconductors is complicated by the presence a Debye tail free carriers, thermally excited from bulk into depletion region. concentration these carriers varies spatially within region and so produces variation rate constant for capture traps. Unless this effect taken account wrong values centre being studied will be obtained. A further consequence that transients are general not exponential functions time, although favourable cases an function may good approximation. In case unreliable time constants deduced if effects eliminated reduction data; difficult to do satisfactorily when measuring initial rates change capacitance.