The impact of tetrahedral capping groups and device processing conditions on the crystal packing, thin film features and OFET hole mobility of 7,14-bis(ethynyl)dibenzo[b,def]chrysenes

作者: Ying Shu , Gavin E. Collis , Christopher J. Dunn , Peter Kemppinen , Kevin N. Winzenberg

DOI: 10.1039/C3TC31030B

关键词:

摘要: A series of tetrahedrally capped acetylene dibenzochrysene derivatives were modelled and then synthesised resulting in compounds with very similar electronic properties, but differing physical properties depending on the capping group. By varying size tetrahedral group we have undertaken a study relationship between molecular structure charge mobility organic transistors. Thin film characterisation techniques (near-edge X-ray absorption fine spectroscopy, scanning electron microscopy, atomic force microscopy diffraction) coupled field effect transistor (OFET) hole data to explore interplay structure, packing, substrate dielectrics mobility. Using this strategy identified lead compound, TMS-DBC 2b, that has one-dimensional slipped stack packing motif high degree π–π overlap produces mobilities as 0.012 cm2 V−1 s−1 when deposited SiO2-ODTS substrates. Further refinement temperature deposition rate results 2b achieving 1.17 s−1. These show subtle modification groups can alter crystal thin microstructure these angular materials, which dramatically influences device processing conditions compound significant increase

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