作者: Majid Mirzaee , Abolghasem Dolati
DOI: 10.1007/S10971-015-3729-X
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摘要: This study aimed to understand the microstructural, optical, and electrical properties of tin-doped indium oxide (ITO) prepared with tetravalent divalent tin salts. The influence valence on electrical, structural, morphological films were characterized by mean four-point probe, thermogravimetric analysis, differential thermal analysis (DTA), UV–Vis spectroscopy, X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), photoelectron spectroscope. XRD results revealed formation cubic bixbyite structure In2O3 a small shift in major peak position toward lower angles addition Sn2+ Sn4+. TG–DTA showed that optimum heat treatment temperatures for thin salts are 500 450 °C, respectively. FESEM decreasing valence, grain size was gradually increased. surface coverage both is similar, without any remarkable cracks. By increasing from II IV, high transparency (88.5 % visible region) low conductivity (10 kΩ/sq.) can be obtained after calcination air at which considered acceptable electrostatic antistatic applications ITO films. Haacke figures merit λ = 550 nm comprised between 2.94 × 10−5 Ω−1 1.83 × 10−5 Ω−1 salt,