Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors
作者： Rajat Sharma , Yong-Seok Choi , Chiou-Fu Wang , Aurélien David , Claude Weisbuch
DOI: 10.1063/1.2805028
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摘要: We report on the realization of highly efficient InGaN microcavity light-emitting diodes incorporating a high index contrast air-gap distributed Bragg reflector (DBR). Detailed analysis deduces an effective cavity length ∼500nm and mode orders 5 6 for measured Fabry-Perot fringes. A value reflectivity ∼70% was determined 4.5 period air∕Al0.08Ga0.92N DBR through finesse based angle-resolved photoluminescence (PL) data. fivefold improvement in light extraction efficiency verified by electrical probing as well PL measurements.
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