Self-Heating Effects In Polysilicon Source Gated Transistors

摘要: Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance fabrication variability, and low series voltage drop, relevant multitude of energy-efficient, large-area, cost effective applications. The current through reverse-biased has potentially positive temperature coefficient, may lead undesirable thermal runaway effects even device failure self-heating. Using numerical simulations we show that, in highly thermally-confined scenarios levels, self-heating is insufficient compromise integrity. Performance minimally affected modest increase output conductance, limit maximum attainable gain. Measurements polysilicon confirm simulated results, with smaller penalties performance, largely due improved heat dissipation metal contacts. We conclude that SGTs can be reliably used for power efficient analog digital circuits without significant performance impact This further demonstrates robustness SGTs.