An experimental study of contact effects in organic thin film transistors
作者： P. V. Necliudov , M. S. Shur , D. J. Gundlach , L. Zhou , J. A. Nichols
DOI: 10.1063/1.2215132
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摘要: We report on parasitic contact effects in organic thin film transistors (OTFTs) fabricated with pentacene films. The influence the OTFT performance of source and drain metal device design was investigated. Top (TC) bottom (BC) gated transmission line model (gated-TLM) test structures were used to extract combined resistance as a function gate voltage swing drain-source for OTFTs gold contacts. For comparison BC palladium contacts studied. Differences bias dependence TC indicate that charge injection are strongly affected by processing. results from this investigation show performances may be limited high mobility channel lengths less than 10μm.
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