Method and apparatus for determining characteristics of MOS devices

作者: Manjul Bhushan , Mark B. Ketchen

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摘要: A set of ring oscillators is formed within a predetermined distance each other. Each oscillator includes number coupled stages. The stages for first given include an inverter having one or more MOS devices gate length. second substantially identical to the inverters in and designed third comprise lengths are different approximately equal Performance measured by using oscillators. used determine additional characteristics single test structure may be physical length (Lpoly), oxide thickness (Tox), capacitance (C), effective resistance (Rsw), tunneling current (Ig), channel leakage per unit width (Ic), active power (P).