Improved electroluminescence from ZnO light-emitting diodes by p-type MgZnO electron blocking layer.
作者： Yong-Seok Choi , Jang-Won Kang , Byeong-Hyeok Kim , Dong-Keun Na , Sang-Jun Lee
DOI: 10.1364/OE.21.011698
关键词:
摘要: We report on the effect of a p-type MgZnO electron blocking layer (EBL) electroluminescence from n-type ZnO/undoped ZnO/p-type ZnO light-emitting diodes (LEDs). The Mg(0.1)Zn(0.9)O EBL was introduced between undoped and layers. increased ultraviolet emission by 140% at 60 mA decreased broad deep-level LEDs. calculated band structures carrier distribution in LEDs show that effectively suppresses overflow to increases hole concentration layer.
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