Rutile-type oxide-diluted magnetic semiconductor: Mn-doped SnO2
作者： H. Kimura , T. Fukumura , M. Kawasaki , K. Inaba , T. Hasegawa
DOI: 10.1063/1.1430856
关键词:
摘要: Epitaxial films of an oxide-diluted magnetic semiconductor with rutile structure, Mn-doped SnO2, have been fabricated by pulsed-laser deposition. As the Mn content increases, systematic changes in lattice constants and in-gap absorption are observed. Magnetization measurements show almost paramagnetic behavior. The injection n-type carrier over 1020 cm−3 is achieved Sb doping. A Sn0.95Mn0.05O2:Sb film shows giant positive magnetoresistance as large 60% at 5 K.
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