High-performance thin film transistors from semiconducting liquid crystalline phases by solution processes
作者： Fapei Zhang , Masahiro Funahashi , Nobuyuki Tamaoki
DOI: 10.1063/1.2768307
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摘要: The authors have prepared liquid crystalline (LC) semiconducting thin films with smectic phases at room temperature from 5-propyl-5″-(4-pentylphenyl)-2,2′:5′,2″-terthiophene (3-TTPPh-5) by spin-coating process. consist of large-size (approximately several tens micrometers) LC domains a lamellar structure. ordering molecular packing within the layer is enhanced after annealing. performance film transistors (TFTs) based on 3-TTPPh-5 influenced largely silane agent modification dielectric. octyltrichlorosilane (OTS) treatment enhances and leads to high hole mobility more than 4×10−2cm2∕Vs in ambient air. It attributed formation highly ordered size comparable channel length TFT as well favorable interaction between OTS molecules.
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