Chapter 3 - Metallization Techniques
作者： D.W. SKELLY , T.-M. LU , D.W. WOODRUFF
DOI: 10.1016/B978-0-12-234115-1.50007-6
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摘要:
sci-hub.se 参考文章(71)
Norman G. Einspruch, Vlsi Electronics: Microstructure Science ,(1982)
Chun T. Wang, Stephen W. H. Yih, Tungsten: Sources, Metallurgy, Properties, and Applications ,(1979)
Shyam P Murarka, Silicides for VLSI applications Elsevier. ,(1983)
J.M. Smith, Chemical Engineering Kinetics ,(1980)
Daniel R. Stull, JANAF thermochemical tables 堀越研究所. ,(1966)
John Christian Bailar, Harry Julius Emeléus, Sir Ronald Nyholm, A. F. Trotman-Dickenson, Comprehensive inorganic chemistry Pergamon Press , Compendium (Exclusive distributors in the Western Hemisphere). ,(1973)
Hermann Schlichting, Boundary layer theory ,(1955)
J. C. Bean, J. M. Poate, Silicon/metal silicide heterostructures grown by molecular beam epitaxy Applied Physics Letters. ,vol. 37, pp. 643- 646 ,(1980) , 10.1063/1.92007
Arthur J. Learn, Derrick W. Foster, Resistivity, grain size, and impurity effects in chemically vapor‐deposited tungsten films Journal of Applied Physics. ,vol. 58, pp. 2001- 2007 ,(1985) , 10.1063/1.336010
K. Akimoto, K. Watanabe, Formation of WxSi1−xby plasma chemical vapor deposition Applied Physics Letters. ,vol. 39, pp. 445- 447 ,(1981) , 10.1063/1.92733