Formation of WxSi1−xby plasma chemical vapor deposition

摘要: Smooth films of W‐Si compounds (WxSi1−x) were successfully formed by plasma chemical vapor deposition using WF6 and SiH4. The atomic ratio W/Si in the film depended on flow rate WF6/SiH4. WxSi1−x obtained when x was less than 0.45 amorphous even after annealed at 1100 °C for 60 min N2 ambient. crystalline phase W observed is 0.99 an as‐deposited film. Distribution atoms found to be uniform. Resistivities varied from ∼3×10−2 ∼4×10−5 Ω cm, corresponding 0.04 0.99. For smaller x, decrease resistivity annealing marked.