Rapid growth of single-crystal diamond on diamond substrates
作者： G. Janssen , W. Vollenberg , L.J. Giling , W.J.P. van Enckevort , J.J.D. Schaminée
DOI: 10.1016/0257-8972(91)90274-Z
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摘要: Abstract Recently an account of the homoepitaxial growth diamond in oxygen-acetylene combustion flame was published (J. Cryst. Growth, 104 (1990) 752). Notwithstanding high deposition rate (50 μm-1 h), material had good optical quality. After removal natural substrate from one samples, it proved that deposit single-crystal diamond. However, most properties were measured with layers still attached to substrate. In this study more elaborate characterizations free-standing, flame-grown are described. Hydrogen, nitrogen and perhaps oxygen identified as impurities, based on IR spectroscopy both photoluminescence cathodoluminescence (PL CL). The distribution impurities is non-uniform, verified by CL topography stress birefringence microscopy. Following standard classification rules neither type I nor II.
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