作者: William R. Robinson
DOI: 10.1016/0022-4596(74)90082-6
关键词:
摘要: Abstract The crystal structures of the semiconductor Ti 2 O 3 and semimetal (Ti 0.900 V 0.100 ) were determined from X-ray diffraction data collected single crystals. compounds are isostructural with Al rhombohedral unit cell dimensions a = 5.4325(8) A α 56.75(1)° for , 5.4692(8) 55.63(1)° doped system. effect substitution +3 is to increase metal-metal distance across shared octahedral face 2.579 in 2.658 while decreasing edge 2.997 2.968 A. metal-oxygen distances exhibit only small changes. These structural changes consistent band theory proposed by Van Zandt, Honig, Goodenough ( 9 explain electrical other properties increasing vanadium content 1− x .