Photoluminescence and Raman study of iron-passivated porous silicon
作者： H.S Mavi , B.G Rasheed , A.K Shukla , R.K Soni , S.C Abbi
DOI: 10.1016/S0921-5107(02)00594-9
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摘要: Abstract Degradation of porous silicon (PS) fabricated by laser-induced etching was studied using photoluminescence (PL) and Raman spectroscopy. Freshly prepared samples were given a heat treatment in hydrofluoric acid plus ferric nitrate solution to produce iron-passivated (IPS) samples. PL measurements on IPS show different peak positions widths as compared freshly non-passivated PS Results analyzed quantum confinement model. Exposing air for more than 4 months resulted no degradation intensity or changes the position size distribution. spectra also revealed line-shape asymmetry comparison The data explained phonon two-dimensions. There is good agreement between nanocrystallites participating iron-passivation.
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