Emission mechanisms in stabilized iron-passivated porous silicon: Temperature and laser power dependences
作者： M. Rahmani , A. Moadhen , A. Mabrouk Kamkoum , M.-A. Zaïbi , R. Chtourou
DOI: 10.1016/J.PHYSB.2011.11.018
关键词:
摘要: Abstract Photoluminescence (PL) measurements of porous silicon (PS) and iron-porous nanocomposites (PS/Fe) with stable optical properties versus temperature laser power density have been investigated. The presence iron in PS matrix is confirmed by Raman spectroscopy. PL intensity PS/Fe increases at low temperature, the evolution integrated follows modified Arrhenius model. incorporation reduces activation energy traducing existence shallow levels related to atoms. Also, dependence peak position a linear high quadratic one temperature. Such due thermal carriers' redistribution an transfer. Similarly, we compared layers. results prove that recombination process realised through lower traps localised electronic gap. However, observed emission essentially direct transitions. So, can conclude induces strong modification mechanisms.
harvard.edu
archives-ouvertes.fr
elsevier.com
sci-hub.se 参考文章(24)
L. Bouzaïene, F. Saidi, L. Sfaxi, H. Maaref, Temperature dependence of the optical properties of InAs quantum dots with bimodal size evolution grown on GaAs (1 1 5)A substrate Physica B-condensed Matter. ,vol. 405, pp. 744- 747 ,(2010) , 10.1016/J.PHYSB.2009.09.098
V Lehmann, W Hönlein, H Reisinger, A Spitzer, H Wendt, J Willer, A novel capacitor technology based on porous silicon Thin Solid Films. ,vol. 276, pp. 138- 142 ,(1996) , 10.1016/0040-6090(95)08038-4
L. T. Canham, M. R. Houlton, W. Y. Leong, C. Pickering, J. M. Keen, Atmospheric impregnation of porous silicon at room temperature Journal of Applied Physics. ,vol. 70, pp. 422- 431 ,(1991) , 10.1063/1.350293
L. Viña, S. Logothetidis, M. Cardona, Temperature dependence of the dielectric function of germanium Physical Review B. ,vol. 30, pp. 1979- 1991 ,(1984) , 10.1103/PHYSREVB.30.1979
Q.W. Chen, X. Li, Y. Zhang, Improvement mechanism of photoluminescence in iron-passivated porous silicon Chemical Physics Letters. ,vol. 343, pp. 507- 512 ,(2001) , 10.1016/S0009-2614(01)00762-X
Tsuyoshi Yoshitake, Tatsuya Nagamoto, Kunihito Nagayama, Microstructure of β-FeSi2 thin films prepared by pulsed laser deposition Thin Solid Films. ,vol. 381, pp. 236- 243 ,(2001) , 10.1016/S0040-6090(00)01750-8
A. G. Cullis, L. T. Canham, P. D. J. Calcott, The structural and luminescence properties of porous silicon Journal of Applied Physics. ,vol. 82, pp. 909- 965 ,(1997) , 10.1063/1.366536
Jüri Krustok, Heikki Collan, Kari Hjelt, Does the low-temperature Arrhenius plot of the photoluminescence intensity in CdTe point towards an erroneous activation energy? Journal of Applied Physics. ,vol. 81, pp. 1442- 1445 ,(1997) , 10.1063/1.363903
B. Tatar, K. Kutlu, M. Ürgen, Synthesis of β-FeSi2/Si heterojunctions for photovoltaic applications by unbalanced magnetron sputtering Thin Solid Films. ,vol. 516, pp. 13- 16 ,(2007) , 10.1016/J.TSF.2007.04.044
P.G. Abramof, C.R.B. Miranda, A.F. Beloto, A.Y. Ueta, N.G. Ferreira, An investigation of natural oxidation process on stain-etched nanoporous silicon by micro-Raman spectroscopy Applied Surface Science. ,vol. 253, pp. 7065- 7068 ,(2007) , 10.1016/J.APSUSC.2007.02.049